- 您现在的位置：买卖IC网 > Sheet目录483 > NDC7001C (Fairchild Semiconductor)MOSFET N+P 60V 340MA SSOT6
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV DSS
? BV DSS
? T J
I DSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
V GS = 0 V, I D = 250 μ A
V GS = 0 V, I D = –250 μ A
I D = 250 μ A,Ref. to 25 ° C
I D = –250 μ A,Ref. to 25 ° C
V DS = 48 V, V GS = 0 V
Q1
Q2
Q1
Q2
Q1
60
–60
67
–57
1
V
mV/ ° C
μ A
V DS = –48 V, V GS = 0 V
Q2
–1
I GSSF
Gate–Body Leakage, Forward
V GS = 20 V,
V DS = 0 V
All
100
nA
I GSSR
Gate–Body Leakage, Reverse
V GS = –20 V, V DS = 0 V
All
–100
nA
On Characteristics
(Note 2)
V GS(th)
Gate Threshold Voltage
Q1
V DS = V GS ,
I D = 250 μ A
1
2.1
2.5
V
Q2
V DS = V GS ,
I D = –250 μ A
–1
–1.9
–3.5
? V GS(th)
? T J
Gate Threshold Voltage
Temperature Coefficient
Q1
Q2
I D = 250 μ A,Referenced. to 25 ° C
I D = –250 μ A,Ref. to 25 ° C
–3.8
3.2
mV/ ° C
R DS(on)
Static Drain–Source
Q1
V GS = 10 V, I D = 0.51 A
1
2
?
On–Resistance
Q2
V GS = 4.5 V, I D = 0.35 A
V GS = 10 V, I D = 0.51 A,T J =125 ° C
V GS = –10 V, I D = –0.34 A
V GS = – 4.5 V,I D = –0.25 A
V GS = –10V,I D = –0.34A,T J =125 ° C
2
1.7
1.2
1.5
1.9
4
3.5
5
7.5
10
I D(on)
On-State Drain Current
Q1
V GS = 10 V
V DS = 10 V
1.5
A
Q2
V GS = –10 V V DS = –10 V
–1
g FS
Forward Transconductance
Q1
V DS = 10 V
I D = 0.51 A
380
mS
Dynamic Characteristics
Q2
V DS = –10 V I D = –0.34A
700
C iss
C oss
Input Capacitance
Output Capacitance
Q1
Q2
Q1
For Q1 :
V DS = 25 V,
f = 1.0MHz
V GS = 0 V
20
66
11
pF
pF
Q2
For Q2 :
13
C rss
Reverse Transfer Capacitance Q1
Q2
V DS = –25 V, V GS = 0 V
f = 1.0MHz
4.3
6
pF
R G
Gate Resistance
Q1
Q2
V GS = 15 mV, f = 1.0 MHz
11.2
11.2
?
Switching Characteristics
(Note 2)
t d(on)
Turn–On Delay Time
Q1
For Q1 :
2.8
5.6
ns
t r
Turn–On Rise Time
Q2
Q1
V DS =25 V,
V GS = 10 V,
I DS = 1 A
R GEN = 6 ?
3.2
8
6.4
16
ns
Q2
For Q2 :
10
20
t d(off)
t f
Turn–Off Delay Time
Turn–Off Fall Time
Q1
Q2
Q1
V DS =–25 V, I DS = –1 A
V GS = –10 V, R GEN = 6 ?
14
8
4
26
16
8
ns
ns
Q2
1
2
Q g
Total Gate Charge
Q1
For Q1 :
1.1
1.5
nC
Q gs
Q gd
Gate–Source Charge
Gate–Drain Charge
Q2
Q1
Q2
Q1
Q2
V DS =25 V,
V GS = 10 V,
For Q2 :
V DS =–25 V,
V GS = –10 V,
I DS = 0.51 A
R GEN = 6 ?
I DS = –0.35 A
R GEN = 6 ?
1.6
0.2
0.3
0.4
0.3
2.2
nC
nC
NDC7001C Rev B (W)
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
NDC7002N_SB9G007
MOSFET N-CH DUAL 50V 6-SSOT
NDC7003P
MOSFET 2P-CH 60V 340MA SSOT6
NDD03N50ZT4G
MOSFET N-CH 500V 2.6A DPAK
NDD04N50Z-1G
MOSFET N-CH 500V 3A IPAK
NDD05N50ZT4G
MOSFET N-CH 500V 5A DPAK
NDF02N60ZH
MOSFET N CH 600V 2.4A TO220FP
NDF03N60ZH
MOSFET N CH 600V 4.8A TO220FP
NDF04N60ZH
MOSFET N CH 600V 4.8A TO220FP
相关代理商/技术参数
NDC7001C
制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NP SUPERSOT-6
NDC7001C
制造商:Fairchild Semiconductor Corporation 功能描述:50V COMP N/P 2/5 O SSOT6
NDC7001C_Q
功能描述:MOSFET Dual N/P Channel FET Enhancement Mode
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDC7002
制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor
NDC7002N
功能描述:MOSFET SO-6 N-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDC7002N
制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
NDC7002N
制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SUPERSOT-6
NDC7002N_Q
功能描述:MOSFET SO-6 N-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube